%0 Book Section
%T Absolute negative resistance in ballistic variable threshold field effect transistors
%+ Laboratoire de Physique Théorique et Astroparticules (LPTA)
%A Dyakonov, Michel
%A Shur, Michael
%Z 07-025; 07-025
%B Future trends in microelectronics
%E S. Luryi
%E J. Xu
%E and A. Zaslavsky
%I Wiley
%P 296-303
%8 2007
%D 2007
%R 10.1002/9780470168264.ch26
%K negative resistance
%K ballistic variable threshold effect transistor
%K Bernaulli's law
%K gate-to-channel capacitance
%K electron concentration
%Z ISBN: 978-0-470-08146-4
%Z Engineering Sciences [physics]/Electronics
%Z Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]Book sections
%X This chapter contains sections titled: * Acknowledgments * References
%G English
%L hal-00264791
%U https://hal.science/hal-00264791
%~ IN2P3
%~ LPTA
%~ CNRS
%~ UNIV-MONTP2
%~ UNIV-MONTPELLIER
%~ UM1-UM2