%0 Journal Article
%T Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory
%+ Groupe d'étude des semiconducteurs (GES)
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%A Bardoux, Richard
%A Guillet, Thierry
%A Gil, B.
%A Lefebvre, P.
%A Bretagnon, T.
%A Taliercio, T.
%A Rousset, Sébastien
%A Semond, F.
%Z Contrat MENRT ACI BUGATI et BOQUANI
%< avec comité de lecture
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 77
%P 235315
%8 2008-06-20
%D 2008
%Z 0803.0899
%R 10.1103/PhysRevB.77.235315
%K quantum dots
%K GaN
%K AlN
%K wurtzite
%K excitons
%Z PACS: 71.35.-y ; 71.70.Gm ; 73.21.La ; 78.55.Cr ; 78.67.Hc
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover, we could not observe any splitting of polarized emission lines, at least within the spectral resolution of our setup (1 meV). We propose a model based on the joint effects of electron-hole exchange interaction and in-plane anisotropy of strain and/or quantum dot shape, in order to explain the quantitative differences between our observations and those previously reported on, e.g. CdTe- or InAs-based quantum dots.
%G English
%2 https://hal.science/hal-00261181v3/document
%2 https://hal.science/hal-00261181v3/file/PRB_Bardoux-arxiv-26-05-2008.pdf
%L hal-00261181
%U https://hal.science/hal-00261181
%~ UNICE
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ UM1-UM2