Usage of Porous Al2O3 Layers for RH Sensing

Veronika Timár-Horváth (1) , László Juhász (1) , András Vass-Várnai (1) , Gergely Perlaky (1)

1 Department of Electron Devices

At the Department of Electron Devices a cheap, more or less CMOS process compatible capacitive type RH sensor has been developed. Capacitive sensors are based on dielectric property changes of thin films upon water vapour uptake which depends on the surrounding media's relative humidity content. Because of the immense surface-to-volume ratio and the abundant void fraction, very high sensitivities can be obtained with porous ceramics. One of the ceramics to be used is porous Al2O3, obtained by electrochemical oxidation of aluminium under anodic bias. The average pore sizes are between 6...9 nm. In our paper we intend to demonstrate images representing the influence of the technological parameters on the porous structure and the device sensitivity.

Mots clés: Non silicon

Domaines: Autre [cs.OH]; Architectures Matérielles [cs.AR]

Veronika Timár-Horváth, László Juhász, András Vass-Várnai, Gergely Perlaky. Usage of Porous Al2O3 Layers for RH Sensing. DTIP 2007, Apr 2007, Stresa, lago Maggiore, Italy. pp.372-376. ⟨hal-00257719⟩