Tuneable Capacitor based on dual picks profile of the sacrificial layer

S. Soulimane (1) , F. Casset (1) , F. Chapuis (1) , P.-L. Charvet (1) , M. Aïd (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

In this paper, we present a novel dual gap tuneable capacitor process based on the profile of the sacrificial layer. This profile involves a tri-layer photo-resist process with only one mask level. This realization is based on a special profile of the sacrificial layer designed by two picks. The mechanism of the sacrificial layer realisation is dependent on resist thickness, resist formulation (viscosity, type of polymer and/or solvent, additives...), design of the patterned layer (size or width) and the conditions under which this layer is prepared: thermal treatment, etch back processes... In this communication we demonstrate influence of the later parameters and discuss how a dual pick profile was achieved.

Mots clés: Manufacturing Techniques

Domaines: Autre [cs.OH]; Architectures Matérielles [cs.AR]

S. Soulimane, F. Casset, F. Chapuis, P.-L. Charvet, M. Aïd. Tuneable Capacitor based on dual picks profile of the sacrificial layer. DTIP 2007, Apr 2007, Stresa, lago Maggiore, Italy. pp.195-198. ⟨hal-00257687⟩