A High-Q Microwave MEMS Resonator

Z. Jian (1) , Y. Yuanwei (1) , Z. Yong (1) , Chen Chen (1, 2) , J. Shixing (1)

1 Nanjing Electronic Devices Institute
2 Dep. of Physics

A High-Q microwave (K band) MEMS resonator is presented, which empolys substrate integrated waveguide (SIW) and micromachined via-hole arrays by ICP process. Nonradiation dielectric waveguide (NRD) is formed by metal filled via-hole arrays and grounded planes. The three dimensional (3D) high resistivity silicon substrate filled cavity resonator is fed by current probes using CPW line. This monolithic resonator results in low cost, high performance and easy integration with planar cicuits. The measured quality factor is beyond 180 and the resonance frequency is 21GHz.It shows a good agreement with the simulation results. The chip size is only 4.7mm x 4.6mm x 0.5mm. Finally, as an example of applications, a filter using two SIW resonators is designed.

Domaines: Autre [cs.OH]; Architectures Matérielles [cs.AR]

Z. Jian, Y. Yuanwei, Z. Yong, Chen Chen, J. Shixing. A High-Q Microwave MEMS Resonator. DTIP 2007, Apr 2007, Stresa, lago Maggiore, Italy. pp.92-95. ⟨hal-00257668⟩