Oxygen defects created in CeO2 irradiated with 200 MeV Au

K. Ohhara (1, 2) , N. Ishikawa (1) , S. Sakai (1) , Y. Matsumoto (1) , O. Michikami (3) , Y. Ohta (3)

1 JAEA - Japan Atomic Energy Agency [Ibaraki]
2 Ibaraki University
3 Iwate University

In this study CeO2 films were irradiated with 200 MeV Au in order to investigate damages created by electronic energy deposition. In Raman spectra after the irradiation, a broad band appears at higher frequency side of the sharp peak due to F2g mode of CeO2. In order to investigate the effect of oxygen vacancies, unirradiated CeO2 film was vacuum annealed at 1000ºC. Raman spectra observed after the annealing exhibits a new feature similar to the one observed for irradiated CeO2 films. The changes of Raman spectra caused by 200 MeV Au irradiation can be consistently interpreted as due to creation of oxygen vacancies by high-density electronic energy deposition.

Mots clés: High energy ion irradiation; Electronic energy deposition; Radiation damage; Oxygen vacancy

Domaines: Physique des Hautes Energies - Expérience [hep-ex]

K. Ohhara, N. Ishikawa, S. Sakai, Y. Matsumoto, O. Michikami, et al.. Oxygen defects created in CeO2 irradiated with 200 MeV Au. The Seventh International Symposium on Swift Heavy Ions in Matter, Jun 2008, Lyon, France. ⟨hal-00256779⟩