Temperature measurement of sub-micrometric ICs by scanning thermal microscopy

Séverine Gomès (1, 2) , Pierre-Olivier Chapuis (2, 3) , François Nepveu (1, 2) , Nathalie Trannoy (2, 4) , Sebastian Volz (2, 3) , Benoît Charlot (2, 5) , Gilles Tessier (2, 6) , Stefan Dilhaire (2, 7) , Bernard Cretin (2, 8) , Pascal Vairac (2, 8)

1 Génome, Population, Interactions
2 MN - Micro et nanothermique
3 EM2C - Laboratoire d'Énergétique Moléculaire et Macroscopique, Combustion
4 LEO - UTAP - Laboratoire d'énergétique et d'optique - Unité de thermique et d'analyse physique
5 TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés
6 Laboratoire Photons Et Matière
7 CPMOH - Centre de physique moléculaire optique et hertzienne
8 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)

Surface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometrSurface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometric size. A CMOS device was designed with arrays of resistive lines 0.35µm in width. The array periods are 0.8 µm and 10µm to study the spatial resolution of the SThM. Integrated Circuits with passivation layers of micrometric and nanometric thicknesses were tested. To enhance signal-to-noise ratio, the resistive lines were heated with an AC current. The passivation layer of nanometric thickness allows us to distinguish the lines when the array period is 10μm. The results raise the difficulties of the SThM measurement due to the design and the topography of ICs on one hand and the size of the thermal probe on the other hand.ic size. A CMOS device was designed with arrays of resistive lines 0.35µm in width. The array periods are 0.8 µm and 10µm to study the spatial resolution of the SThM. Integrated Circuits with passivation layers of micrometric and nanometric thicknesses were tested. To enhance signal-to-noise ratio, the resistive lines were heated with an AC current. The passivation layer of nanometric thickness allows us to distinguish the lines when the array period is 10μm. The results raise the difficulties of the SThM measurement due to the design and the topography of ICs on one hand and the size of the thermal probe on the other hand.

Domaines: Thermique [physics.class-ph]; Thermique [physics.class-ph]; Micro et nanotechnologies/Microélectronique

Séverine Gomès, Pierre-Olivier Chapuis, François Nepveu, Nathalie Trannoy, Sebastian Volz, et al.. Temperature measurement of sub-micrometric ICs by scanning thermal microscopy. IEEE Transactions on Components and Packaging Technologies, 2007, 30 (3), pp.424-431. ⟨10.1109/TCAPT.2007.901748⟩. ⟨hal-00192611⟩