THERMAL IMAGING OF Si, GaAs AND GaN -BASED DEVICES WITHIN THE MICROTHERM PROJECT

S. Pavageau (1) , G. Tessier (1) , C. Filloy (1) , G. Jerosolimski (1) , D. Fournier (1) , M.-L. Polignano (2) , I. Mica (2) , S. Cassette (3) , R. Aubry (3) , O. Durand (3)

1 LOS - Laboratoire d'optique des solides
2 ST-AGRATE - STMicroelectronics [Agrate Brianza]
3 Thales Research and Technology [Palaiseau]

Within the european project Microtherm, we have developed a CCD-based thermoreflectance system which delivers thermal images of working integrated circuits with high spatial and thermal resolutions (down to 350 nm and 0.1 K respectively). We illustrate the performances of this set-up on several classes of semiconductor devices including high power transistors and transistor arrays in silicon, gallium arsenide and gallium nitride technologies.

Mots clés: Thermal mapping; thermal imaging; thermoreflectance

Domaines: Architectures Matérielles [cs.AR]

S. Pavageau, G. Tessier, C. Filloy, G. Jerosolimski, D. Fournier, et al.. THERMAL IMAGING OF Si, GaAs AND GaN -BASED DEVICES WITHIN THE MICROTHERM PROJECT. THERMINIC 2005, Sep 2005, Belgirate, Lago Maggiore, Italy. pp.224-228. ⟨hal-00189477⟩