RELIABILITY STUDY OF POWER RF LDMOS DEVICES UNDER THERMAL STRESS

M.A Belaïd (1) , K. Ketata (1) , K. Mourgues (1) , M. Gares (1) , M. Masmoudi (1) , J. Marcon (1)

1 LEMI - Laboratoire Electronique Microtechnologie et Instrumentation

This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied on power RF LDMOS : Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, air-air test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures T). The performances shift for some critical electrical parameters such as on-state resistance (Rds_on)and feedback capacitance (Crs)have been demonstrated under various tests. To better understand the parameter shift that appear after thermal stress, we used a physical simulation software (Silvaco-Atlas, 2D) to confirm qualitatively degradation phenomena.

Mots clés: Thermal stress; Reliability; LDMOS; Hot carrier effects

Domaines: Architectures Matérielles [cs.AR]

M.A Belaïd, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi, et al.. RELIABILITY STUDY OF POWER RF LDMOS DEVICES UNDER THERMAL STRESS. THERMINIC 2005, Sep 2005, Belgirate, Lago Maggiore, Italy. pp.38-42. ⟨hal-00189450⟩