FABRICATION OF SILICON-ON-INSULATOR MEM RESONATORS WITH DEEP SUB-MICRON TRANSDUCTION GAPS
Résumé
The paper proposes and validates a low-cost technological process for realizing fully mono-crystalline MEM resonators with deep sub-micron transduction gaps on SOI substrates. The MEM resonators are designed to work as BLR (bulk lateral resonators) in which the resonance of a suspended mass is excited and detected by lateral electrodes. For MEM BLRs, nano-scaled gaps (<200nm) are essential to reduce the motional resistance in the order of few kΩ as well as to avoid the use of large DC applied voltages. Only standard optical lithography with 1µm resolution and IC-compatible processing steps are employed to obtain 100÷200nm wide gaps with very high aspect-ratios of [40:1], allowing the fabrication of high Q resonators expected to work into MHz to GHz range.
Domaines
Architectures Matérielles [cs.AR]
Origine : Fichiers produits par l'(les) auteur(s)
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