IMPROVEMENT OF THE PHOTOVOLTAIC CURRENT FOR THE NON-BIAS OPTICAL SENSOR IN A LAYERED FILM STRUCTURE.

M. Ichiki (1) , H. Furue (1) , T. Kobayashi (1) , Y. Morikawa (2) , T. Nakada (3) , K. Nonaka (4) , R. Maeda (1)

1 Advanced Manufacturing Research Institute
2 Intelligent System Research Institute
3 School of Information Environment
4 On-site Sensing and Diagnosis Research Laboratory

Photovoltaic (Pb,La)(Zr,Ti)O3 (PLZT) films in a layered structure of different crystallographic orientations are fabricated by an optimized metalorganic deposition (MOD) method. Such films of (001) orientation exhibit a photovoltaic electrical power of approximately 20 times higher than that of random films. The anisotropic optical properties of the oriented films, including dark conductivity, photoconductivity and photovoltaic tensor surfaces, are obtained quantitatively. These results show that the photovoltaic output current and power of the oriented films are highly improved to be equal to those of semiconductors and suitable for application in the optical sensor of micro-electro-mechanical systems (MEMS).

Domaines: Architectures Matérielles [cs.AR]

M. Ichiki, H. Furue, T. Kobayashi, Y. Morikawa, T. Nakada, et al.. IMPROVEMENT OF THE PHOTOVOLTAIC CURRENT FOR THE NON-BIAS OPTICAL SENSOR IN A LAYERED FILM STRUCTURE.. DTIP 2006, Apr 2006, Stresa, Lago Maggiore, Italy. 6 p. ⟨hal-00189275⟩