The annealing induced extraordinary properties of SI based ZNO film grown by RF sputtering

Jing Li (1, 2) , L. Dedeng (2) , Suntao Wu (1)

1 MEMS Research Center
2 Dep. of PHysics

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were in situ deposited by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel method. A 0.1-µm-thick PZT layer with (111) or (100)-preferred orientation was first deposited onto Pt/Ti/SiO2/Si substrates using the sol-gel method, and than a PZT layer with thickness of 1µm was in situ deposited by PLD on the above-mentioned PZT layer. The crystalline phases and the preferred orientations of the PZT films were investigated by X-ray diffraction analysis. Surface and cross-sectional morphologies were observed by scanning electron microscopy and transmission electron microscopy. The electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The preferred orientation of the films can be controlled using the template layer derived by the sol-gel method. The deposition temperature required to obtain the perovskite phase in this process is approximately 460°C, and is significantly lower than that in the case of direct film deposition by PLD on the Pt/Ti/SiO2/Si substrates. Keywords: lead zirconate titanate (PZT), thin film, sol-gel method, laser ablation, electrical properties

Mots clés: Fabrication Method

Domaines: Architectures Matérielles [cs.AR]

Jing Li, L. Dedeng, Suntao Wu. The annealing induced extraordinary properties of SI based ZNO film grown by RF sputtering. DTIP 2006, Apr 2006, Stresa, Lago Maggiore, Italy. 6 p. ⟨hal-00189259⟩