VLS growth of SiC epilayers

Gabriel Ferro (1) , Didier Chaussende (2) , Christophe Jacquier (1)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 LMGP - Laboratoire des matériaux et du génie physique

Vapour phase processes for the growth of both SiC ingots and epilayers have now reached the industrial point and are facing the related problems. Reducing the production costs, for example by increasing wafer size and the process yields, is an important issue for large scale development. Emerging and alternative epitaxial approaches may help either to decrease these costs or further improve the material quality. In this chapter, potentialities of the Vapour-Liquid-Solid mechanism for SiC epitaxial growth are reviewed with the aim of avoiding or solving some problems encountered in CVD growth. For instance, issues like increasing the growth rate, decreasing the temperature, reaching high p type doping ar demonstrating selective epitaxial growth are discussed from the VLS viewpoint and compared to results obtained with the CVD technique.

Mots clés: SiC; epitaxy; VLS; low emperature; doping

Domaines: Matériaux

Gabriel Ferro, Didier Chaussende, Christophe Jacquier. VLS growth of SiC epilayers. M. Syväjârvi and R. Yakimova. Wide band gap materials and new developments, Research signpost, pp.91-116, 2006. ⟨hal-00140374⟩