%0 Journal Article
%T Tunable plasma wave resonant detection of optical beating in high electron mobility transistor
%+ Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2)
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
%A Torres, Jérémi
%A Nouvel, P.
%A Akwoue-Ondo, A.
%A Teppe, F.
%A Shchepetov, A.
%A Bollaert, S.
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 89
%N 20
%P 201101.1-201101.3
%8 2006
%D 2006
%Z physics/0610078
%R 10.1063/1.2388142
%K terahertz
%K HEMTs
%K cw-laser
%Z 85.30.Tv, 52.35.-g, 61.80.Ba, 2006
%Z Physics [physics]/Physics [physics]/Optics [physics.optics]
%Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
%Z Engineering Sciences [physics]/PlasmasJournal articles
%X We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75–490 GHz. The observed frequency dependence on gate-bias is found to be in good agreement with the theoretical plasma waves dispersion law.
%G English
%2 https://hal.science/hal-00105454/document
%2 https://hal.science/hal-00105454/file/APL_photodetection2.pdf
%L hal-00105454
%U https://hal.science/hal-00105454
%~ CNRS
%~ UNIV-VALENCIENNES
%~ UNIV-MONTP2
%~ IEMN
%~ IES
%~ GES
%~ UNIV-MONTPELLIER
%~ CEM2
%~ UNIV-LILLE
%~ UM1-UM2
%~ TEST-UPHF