Measurement of thermal conductance of silicon nanowires at low temperature

Olivier Bourgeois (1) , Thierry Fournier (2) , Jacques Chaussy (1)

1 NEEL - TPS - Thermodynamique et biophysique des petits systèmes
2 NEEL - Nanofab - Nanofabrication

We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on Silicon On Insulator (SOI) substrate. We measure the thermal conductance of the phonon wave guide by the 3Ω method. The cross-section of the nanowire approaches the dominant phonon wavelength in silicon which is of the order of 100 nm at 1K. Above 1.3K the conductance behaves as T3, but a deviation is measured at the lowest temperature which can be attributed to the reduced geometry.

Mots clés: thermal conductance; low temperature; nanowire; 3w method

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

Olivier Bourgeois, Thierry Fournier, Jacques Chaussy. Measurement of thermal conductance of silicon nanowires at low temperature. Journal of Applied Physics, 2007, 101 (1), pp.016104. ⟨10.1063/1.2400093⟩. ⟨hal-00088036⟩