Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime.

Vincent T. F. Renard (1, 2) , O. A. Tkachenko (1, 3) , Ze Don Kvon (1, 3) , E. B. Olshanetsky (1, 3) , A. I. Toropov (3) , J.C Portal (1, 2, 4)

1 LCMI-GHMFL - Laboratoire des champs magnétiques intenses
2 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
3 Institute of semiconductor Physics - Institute of semiconductor Physics
4 IUF - Institut universitaire de France

We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

Vincent T. F. Renard, O. A. Tkachenko, Ze Don Kvon, E. B. Olshanetsky, A. I. Toropov, et al.. Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72, pp.075313. ⟨hal-00003624⟩