%0 Course
%T Optoelectronic properties of hexagonal boron nitride
%+ Laboratoire Charles Coulomb (L2C)
%A Cassabois, Guillaume
%Z L2C:19-170
%C Russia
%8 2019-09-09
%D 2019
%K Hexagonal boron nitride
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Lectures
%X I will discuss here our results on phonon-assisted recombination in hBN, from bulk crystals to few-layer samples. First, I will focus on hBN crystals where the combination of isotopic purification, Raman scattering and polarized-resolved photoluminescence allowed us to identify the different phonon modes involved in the efficient phonon-assisted recombination in bulk hBN. In a second part, I will discuss photoluminescence experiments in epilayers grown by high-temperature molecular beam epitaxy. These epilayers have a thickness of few monolayers of hBN, and I will show that phonon-assisted recombination displays a distinct phenomenology with a PL spectrum different from the one of bulk crystals.
%G English
%2 https://hal.science/cel-02289713/document
%2 https://hal.science/cel-02289713/file/Cassabois_Tutorial_StPet.pdf
%L cel-02289713
%U https://hal.science/cel-02289713
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021