ref_biblio

Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, David Trémouilles, et al.. First results on 1.2 kV SiC MOSFET body diode robustness tests. Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩. ⟨hal-04282544⟩

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Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Dominique Tournier. Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices. International Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩. ⟨hal-04238355⟩

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Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, Régis Meuret, et al.. First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨hal-04240602⟩

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Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Luong Viêt V Phung, Besar Asllani, et al.. 4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method. Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩. ⟨hal-03689424⟩

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Jean-François Mogniotte, Dominique Tournier, Christophe Raynaud, Mihai Lazar, Dominique Planson, et al.. Silicon Carbide Technology of MESFET-Based Power Integrated Circuits. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩. ⟨hal-01864533⟩

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Philippe Cussac, Cyrille Duchesne, Jean-Baptiste Fonder, Dominique Tournier, Pierre Brosselard, et al.. FilSiC – De l'épitaxie au module de puissance. Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France. ⟨hal-01361598⟩

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Lumei Wei, Marie-Laure Locatelli, Bertrand Vergne, Pierre Bidan, Sorin Dinculescu, et al.. Mécanismes de claquage de diodes bipolaires en SiC - Impact du milieu isolant en surface. Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France. ⟨hal-01361631⟩

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Besar Asllani, Maxime Berthou, Dominique Tournier, Pierre Brosselard, Phillippe Godignon. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range. Materials Science Forum, 2016, 858, pp.741 - 744. ⟨10.4028/www.scientific.net/MSF.858.741⟩. ⟨hal-01646323⟩

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Shiqin Niu, Maxime Berthou, Dominique Tournier. Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel. Materials Science Forum, 2016, 858, pp.925 - 928. ⟨10.4028/www.scientific.net/MSF.858.925⟩. ⟨hal-01857351⟩

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Amira Souguir-Aouani, Nicolas Thierry-Jebali, Dominique Tournier, Arnaud Yvon, Emmanuel Collard, et al.. Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations. Materials Science Forum, 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩. ⟨hal-01857348⟩

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A Souguir-Aouani, N. Thierry-Jebali, Dominique Tournier, A Yvon, E Collard, et al.. Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation. ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44. ⟨hal-02138522⟩

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Pierre Brosselard, Florian Chevalier, Benjamin Proux, Nicolas Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode. Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩. ⟨hal-02133670⟩

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Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFET. EOS/ESD Symposium, Sep 2015, Reno, United States. ⟨hal-01178266⟩

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Bertrand Vergne, Sigo Scharnholz, Dominique Planson, Dominique Tournier, Pierre Brosselard. Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors. International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic. ⟨hal-02428642⟩

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Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Failure Analysis of ESD-stressed SiC MESFET. Microelectronics Reliability, 2015, 55 (9-10), pp.1542-1548. ⟨10.1016/j.microrel.2015.06.121⟩. ⟨hal-01176674⟩

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Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Analyse du mécanisme d'un défaut ESD sur un MESFET en SiC. Journées Nationales du Réseau de Doctorants en Microélectronique, Jun 2015, Bordeaux, France. ⟨hal-01339803⟩

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Shiqin Niu, Maxime Berthou, Dominique Tournier. Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET. Materials Science Forum, 2015, 821-823, pp.797 - 800. ⟨10.4028/www.scientific.net/MSF.821-823.797⟩. ⟨hal-01857350⟩

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Maxime Berthou, Dominique Planson, Dominique Tournier. Short-Circuit Capability Exploration of Silicon Carbide Devices. Materials Science Forum, 2015, 821-823, pp.810-813. ⟨10.4028/www.scientific.net/MSF.821-823.810⟩. ⟨hal-02133674⟩

ref_biblio

Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature. Materials Science Forum, 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩. ⟨hal-02116809⟩

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Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantin Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩. ⟨hal-01391852⟩

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Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique. European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩. ⟨hal-01387989⟩

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Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩. ⟨hal-01388002⟩

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Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature. ECSCRM'14, Sep 2014, Grenoble, France. ⟨hal-02132486⟩

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Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantinos Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75. ⟨hal-02133681⟩

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Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Analysis of an ESD failure mechanism on a SiC MESFET. Microelectronics Reliability, 2014, pp.MR11331. ⟨10.1016/j.microrel.2014.07.134⟩. ⟨hal-01059962⟩

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Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065307⟩

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Sigo Scharnholz, Luong Viêt Phung, Dominique Tournier, Bertrand Vergne, Ralf Hassdorf, et al.. Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065352⟩

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Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températures. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065281⟩

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Besar Asllani, Shiqin Niu, Patrick Denis, Maxime Berthou, Dominique Tournier, et al.. Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065193⟩

ref_biblio

Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Tournier, Bertrand Vergne, et al.. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes. Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩. ⟨hal-01387924⟩

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Dominique Tournier, Philippe Godignon, Shiqin Niu, Jean Francois de Palma. SiC Current Limiting FETs (CLFs) for DC Applications. Materials Science Forum, 2014, 778-780, pp.895 - 898. ⟨10.4028/www.scientific.net/MSF.778-780.895⟩. ⟨hal-01857349⟩

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Thibaut Chailloux, Cyril Calvez, Nicolas Thierry Thierry-Jebali, Dominique Planson, Dominique Tournier. SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices. Materials Science Forum, 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩. ⟨hal-01628242⟩

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Florin Doru Hutu, Bruno Allard, Fabrice Jumel, Mathieu Maranzana, Kevin Marquet, et al.. Formation par projet et opportunité d'accès à distance à des ressources pédagogiques. Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2014, JPCNFM 2012 – 12e journées pédagogiques du CNFM (Coordination nationale pour la formation en micro-électronique et en nanotechnologies), 13 (005), pp.1-10. ⟨10.1051/j3ea/2014005⟩. ⟨hal-01005316⟩

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A. Vo-Ha, D. Carole, Mihai Lazar, Dominique Tournier, F. Cauwet, et al.. Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport. Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩. ⟨hal-01627830⟩

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Luong Viêt Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, Christian Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩. ⟨hal-04240572⟩

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Luong Viet Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, C. Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩. ⟨hal-01636483⟩

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Fabien Dubois, Dominique Bergogne, Dominique Tournier, Cyril Buttay, Régis Meuret, et al.. Analysis of the SiC VJFET gate punch-through and its dependence with the temperature. EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩. ⟨hal-00874655⟩

ref_biblio

Thibault Chailloux, Cyril Calvez, Pascal Bevilacqua, Dominique Planson, Dominique Tournier. Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics. HiTEN'13, Jul 2013, Oxford, United Kingdom. ⟨hal-03326669⟩

ref_biblio

Khalil El Falahi, Stanislas Hascoët, Cyril Buttay, Pascal Bevilacqua, Luong Viet Phung, et al.. High temperature, Smart Power Module for aircraft actuators. HiTEN'13, Jul 2013, Oxford, United Kingdom. ⟨hal-00874666⟩

ref_biblio

Pierre Brosselard, F Chevalier, B Proux, N Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode. International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France. ⟨hal-04022951⟩

ref_biblio

A. Vo-Ha, D. Carole, Mihai Lazar, Dominique Tournier, F. Cauwet, et al.. Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase. Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩. ⟨hal-02863887⟩

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Florian Chevalier, Pierre Brosselard, Dominique Tournier, G. Grosset, L. Dupuy, et al.. Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET. Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩. ⟨hal-00803057⟩

ref_biblio

Davy Carole, Arthur Vo-Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry-Jebali, et al.. Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport. Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩. ⟨hal-00803058⟩

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Arthur Vo Ha, Davy Carole, Mihai Lazar, Dominique Tournier, François Cauwet, et al.. p-Doped SiC Growth on Diamond Substrate by VLS Transport. Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩. ⟨hal-01627777⟩

ref_biblio

Dominique Planson, Pierre Brosselard, Dominique Tournier, Luong Viet Phung, Christian Brykinski. Towards Very High Voltage SiC Power Devices. ECS Transactions, 2013, 50 (3), pp.425-436. ⟨10.1149/05003.0425ecst⟩. ⟨hal-04240149⟩

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F Chevalier, G Grosset, L Dupuy, Dominique Tournier, Dominique Planson, et al.. A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET. HETECH, Nov 2012, Barcelone, France. ⟨hal-01113179⟩

ref_biblio

Dominique Planson, Pierre Brosselard, Dominique Tournier, L V Phung, C. Brylinski. Towards Very High Voltage SiC Power Devices. PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩. ⟨hal-02116906⟩

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Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩. ⟨hal-00803059⟩

ref_biblio

Jean Lorenzzi, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate. Materials Science Forum, 2012, 717-720, pp.165-168. ⟨10.4028/www.scientific.net/MSF.717-720.165⟩. ⟨hal-00803063⟩

ref_biblio

Mihai Lazar, François Jomard, Duy Minh M Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements. Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩. ⟨hal-02166414⟩

ref_biblio

Jean-François Mogniotte, Dominique Tournier, Pascal Bevilacqua, Philippe Godignon, Dominique Planson. Design of an integrated power converter in Wide Band Gap for harsh environments. Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany. ⟨hal-02124203⟩

ref_biblio

Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOS. Materials Science Forum, 2012, 717-720, pp.1093-1096. ⟨10.4028/www.scientific.net/MSF.717-720.1093⟩. ⟨hal-00803062⟩

ref_biblio

Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩. ⟨hal-00803061⟩

ref_biblio

Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747294⟩

ref_biblio

Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747298⟩

ref_biblio

Jean Lorenzzi, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747299⟩

ref_biblio

Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements. ICSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747300⟩

ref_biblio

Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOS. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747607⟩

ref_biblio

Hervé Morel, Youness Hamieh, Dominique Tournier, Rémi Robutel, Fabien Dubois, et al.. A multi-physics model of the VJFET with a lateral channel. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD. ⟨hal-00629220⟩

ref_biblio

Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩. ⟨hal-00799902⟩

ref_biblio

Nicolas Thierry-Jebali, Olivier Ménard, Christiane Dubois, Dominique Tournier, Emmanuel Collard, et al.. Investigations on the origin of the ohmic behavior for Ti/Al based contacts on n-type GaN. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.208-212, ⟨10.4028/www.scientific.net/MSF.711.208⟩. ⟨hal-00747672⟩

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Jean Lorenzzi, Nicoletta Jegenyes, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩. ⟨hal-00747669⟩

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Florian Chevalier, Pierre Brosselard, Dominique Planson, Dominique Tournier. Conception d'un JFET haute tension à canal latéral et vertical en carbure de silicium. JNRDM2011, May 2011, Paris, France. ⟨hal-01113175⟩

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Bruno Allard, Cyril Buttay, Dominique Tournier, Rémi Robutel, Jean-François Mogniotte, et al.. Higher temperature power electronics for larger-scale mechatronic integration. Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination). ⟨hal-00687139⟩

ref_biblio

Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩. ⟨hal-00597432⟩

ref_biblio

Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD. ⟨hal-00661500⟩

ref_biblio

Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩. ⟨hal-02168909⟩

ref_biblio

Duy Minh Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩. ⟨hal-00661429⟩

ref_biblio

J. Lorenzzi, Mihai Lazar, Dominique Tournier, N. Jegenyes, D. Carole, et al.. 3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt. Crystal Growth & Design, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩. ⟨hal-00786365⟩

ref_biblio

Khalil El Falahi, Bruno Allard, Dominique Bergogne, Dominique Tournier. Evaluation of commercial CMOS SOI drivers in harsh conditions (200°C). Consideration for delay, rise-time and fall-time versus temperature. European Journal of Electrical Engineering, 2011, 14 (5), pp.587-600. ⟨10.3166/ejee.14.587-600⟩. ⟨hal-00658759⟩

ref_biblio

Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. CSCRM, Aug 2010, Oslo, Norway. ⟨hal-00661470⟩

ref_biblio

Mehdi Dridi, Gérard Scorletti, Mohamed Smaoui, Dominique Tournier. From theoretical differentiation methods to low-cost digital implementation. IEEE ISIE, Jul 2010, Bari, Italy. pp.184 - 189, ⟨10.1109/ISIE.2010.5637595⟩. ⟨hal-00550424⟩

ref_biblio

Dominique Bergogne, Olivier Berry, Sonia Dhokkar, Youness Hamieh, Farid Meibody-Tabar, et al.. Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON). 13ème EPF, Jun 2010, Saint-Nazaire, France. ⟨hal-00618715⟩

ref_biblio

Mehdi Dridi, Gérard Scorletti, Mohamed Smaoui, Dominique Tournier, Xuefang Lin-Shi. Weighted H∞ Filtering versus Observation: Application to signal Differentiation. 2010 IEEE ACC, Jun 2010, Baltimore, United States. pp.1404-1409, ⟨10.1109/ACC.2010.5530510⟩. ⟨hal-00550422⟩

ref_biblio

Khalil El Falahi, Bruno Allard, Dominique Tournier, Dominique Bergogne. Évaluation des performances de drivers commerciaux en technologie SOI dans des conditions extrêmes (200°C). 13ème EPF, Jun 2010, Saint-Nazaire, France. ⟨hal-00618671⟩

ref_biblio

Khalil El Falahi, Bruno Allard, Dominique Tournier, Dominique Bergogne. Performance of Commercial SOI Driver in Harsh Conditions (up to 200°C). HiTEC 2010, May 2010, Albuquerque, United States. pp.000054. ⟨hal-00485267⟩

ref_biblio

Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. Materials Science Forum, 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩. ⟨hal-02168907⟩

ref_biblio

Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson, Bruno Allard. SiC BJT driver applied to a 2 kW inverter: Performances and limitations. 6th CIPS, Mar 2010, Nuremberg, Germany. ⟨hal-00579223⟩

ref_biblio

Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices. Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩. ⟨hal-02186368⟩

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Jean Lorenzzi, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, Francois Cauwet, et al.. Investigation of 3C-SiC lateral growth on 4H-SiC MESAs. CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩. ⟨hal-00786369⟩

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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩. ⟨hal-00496976⟩

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Arnaud Devie, Dominique Tournier, Philippe Godignon, Miquel Vellvehi, Josep Montserrat, et al.. Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits. CSCRM, Oct 2009, Nuremberg, Germany. pp.1159-1162, ⟨10.4028/www.scientific.net/MSF.645-648.1159⟩. ⟨hal-00496985⟩

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Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009. ⟨hal-00661529⟩

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Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical beam induced current measurements: principles and applications to SiC device characterization. physica status solidi (a), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩. ⟨hal-00398971⟩

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Christian Martin, Bruno Allard, Dominique Tournier, Maher Soueidan, Jean-Jacques Rousseau, et al.. Planar inductors for high frequency DC-DC converters using microwave magnetic material. ECCE, Sep 2009, San José, CA, United States. pp.1890 - 1894, ⟨10.1109/ECCE.2009.5316363⟩. ⟨hal-00618646⟩

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Dominique Bergogne, Asif Hammoud, Dominique Tournier, Cyril Buttay, Youness Amieh, et al.. Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages. EPE, Sep 2009, Barcelone, France. pp.1--8. ⟨hal-00446059⟩

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Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of High Temperature Power Electronics. Microtherm, Jun 2009, Lodz, Poland. pp.8-17. ⟨hal-00413349⟩

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Pierre Brosselard, Dominique Tournier, Viorel Banu, Xavier Jordà, Philippe Godignon, et al.. Novel Structures of 3.3kV 4H-SiC BJTs to Reduce the Stacking Faults Expansion. ISPSD, Jun 2009, Barcelone, Spain. à paraître. ⟨hal-00375323⟩

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Dominique Tournier, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard, et al.. High Power Density SiC 450A AccuMOSFET for Current Limiting Applications. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩. ⟨hal-04368124⟩

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Nicolas Dheilly, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Pascal Bevilacqua, et al.. Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩. ⟨hal-04368136⟩

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Maher Soueidan, Mihai Lazar, Duy Minh Nguyen, Dominique Tournier, Christophe Raynaud, et al.. Process Optimization for High Temperature SiC Lateral Devices. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩. ⟨hal-04368215⟩