ref_biblio

Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, Régis Meuret, et al.. First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨hal-04240602⟩

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Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Dominique Tournier. Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices. International Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩. ⟨hal-04238355⟩

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Bertrand Vergne, Sigo Scharnholz, Dominique Planson, Dominique Tournier, Pierre Brosselard. Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors. International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic. ⟨hal-02428642⟩

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Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFET. EOS/ESD Symposium, Sep 2015, Reno, United States. ⟨hal-01178266⟩

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A Souguir-Aouani, N. Thierry-Jebali, Dominique Tournier, A Yvon, E Collard, et al.. Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation. ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44. ⟨hal-02138522⟩

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Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature. ECSCRM'14, Sep 2014, Grenoble, France. ⟨hal-02132486⟩

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Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩. ⟨hal-01388002⟩

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Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantinos Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75. ⟨hal-02133681⟩

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Thibault Chailloux, Cyril Calvez, Pascal Bevilacqua, Dominique Planson, Dominique Tournier. Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics. HiTEN'13, Jul 2013, Oxford, United Kingdom. ⟨hal-03326669⟩

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Pierre Brosselard, F Chevalier, B Proux, N Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode. International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France. ⟨hal-04022951⟩

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Khalil El Falahi, Stanislas Hascoët, Cyril Buttay, Pascal Bevilacqua, Luong Viet Phung, et al.. High temperature, Smart Power Module for aircraft actuators. HiTEN'13, Jul 2013, Oxford, United Kingdom. ⟨hal-00874666⟩

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Fabien Dubois, Dominique Bergogne, Dominique Tournier, Cyril Buttay, Régis Meuret, et al.. Analysis of the SiC VJFET gate punch-through and its dependence with the temperature. EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩. ⟨hal-00874655⟩

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Luong Viêt Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, Christian Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩. ⟨hal-04240572⟩

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Jean-François Mogniotte, Dominique Tournier, Pascal Bevilacqua, Philippe Godignon, Dominique Planson. Design of an integrated power converter in Wide Band Gap for harsh environments. Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany. ⟨hal-02124203⟩

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F Chevalier, G Grosset, L Dupuy, Dominique Tournier, Dominique Planson, et al.. A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET. HETECH, Nov 2012, Barcelone, France. ⟨hal-01113179⟩

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Dominique Planson, Pierre Brosselard, Dominique Tournier, L V Phung, C. Brylinski. Towards Very High Voltage SiC Power Devices. PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩. ⟨hal-02116906⟩

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Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD. ⟨hal-00661500⟩

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Bruno Allard, Cyril Buttay, Dominique Tournier, Rémi Robutel, Jean-François Mogniotte, et al.. Higher temperature power electronics for larger-scale mechatronic integration. Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination). ⟨hal-00687139⟩

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Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747298⟩

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Hervé Morel, Youness Hamieh, Dominique Tournier, Rémi Robutel, Fabien Dubois, et al.. A multi-physics model of the VJFET with a lateral channel. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD. ⟨hal-00629220⟩

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Jean Lorenzzi, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747299⟩

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Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements. ICSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747300⟩

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Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOS. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747607⟩

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Nicolas Thierry-Jebali, Olivier Ménard, Christiane Dubois, Dominique Tournier, Emmanuel Collard, et al.. Investigations on the origin of the ohmic behavior for Ti/Al based contacts on n-type GaN. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.208-212, ⟨10.4028/www.scientific.net/MSF.711.208⟩. ⟨hal-00747672⟩

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Jean Lorenzzi, Nicoletta Jegenyes, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩. ⟨hal-00747669⟩

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Florian Chevalier, Pierre Brosselard, Dominique Planson, Dominique Tournier. Conception d'un JFET haute tension à canal latéral et vertical en carbure de silicium. JNRDM2011, May 2011, Paris, France. ⟨hal-01113175⟩

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Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747294⟩

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Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. CSCRM, Aug 2010, Oslo, Norway. ⟨hal-00661470⟩

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Khalil El Falahi, Bruno Allard, Dominique Tournier, Dominique Bergogne. Performance of Commercial SOI Driver in Harsh Conditions (up to 200°C). HiTEC 2010, May 2010, Albuquerque, United States. pp.000054. ⟨hal-00485267⟩

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Mehdi Dridi, Gérard Scorletti, Mohamed Smaoui, Dominique Tournier, Xuefang Lin-Shi. Weighted H∞ Filtering versus Observation: Application to signal Differentiation. 2010 IEEE ACC, Jun 2010, Baltimore, United States. pp.1404-1409, ⟨10.1109/ACC.2010.5530510⟩. ⟨hal-00550422⟩

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Jean Lorenzzi, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, Francois Cauwet, et al.. Investigation of 3C-SiC lateral growth on 4H-SiC MESAs. CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩. ⟨hal-00786369⟩

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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson, Bruno Allard. SiC BJT driver applied to a 2 kW inverter: Performances and limitations. 6th CIPS, Mar 2010, Nuremberg, Germany. ⟨hal-00579223⟩

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Mehdi Dridi, Gérard Scorletti, Mohamed Smaoui, Dominique Tournier. From theoretical differentiation methods to low-cost digital implementation. IEEE ISIE, Jul 2010, Bari, Italy. pp.184 - 189, ⟨10.1109/ISIE.2010.5637595⟩. ⟨hal-00550424⟩

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Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of High Temperature Power Electronics. Microtherm, Jun 2009, Lodz, Poland. pp.8-17. ⟨hal-00413349⟩

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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩. ⟨hal-00496976⟩

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Dominique Bergogne, Asif Hammoud, Dominique Tournier, Cyril Buttay, Youness Amieh, et al.. Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages. EPE, Sep 2009, Barcelone, France. pp.1--8. ⟨hal-00446059⟩

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Arnaud Devie, Dominique Tournier, Philippe Godignon, Miquel Vellvehi, Josep Montserrat, et al.. Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits. CSCRM, Oct 2009, Nuremberg, Germany. pp.1159-1162, ⟨10.4028/www.scientific.net/MSF.645-648.1159⟩. ⟨hal-00496985⟩

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Pierre Brosselard, Dominique Tournier, Viorel Banu, Xavier Jordà, Philippe Godignon, et al.. Novel Structures of 3.3kV 4H-SiC BJTs to Reduce the Stacking Faults Expansion. ISPSD, Jun 2009, Barcelone, Spain. à paraître. ⟨hal-00375323⟩

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Christian Martin, Bruno Allard, Dominique Tournier, Maher Soueidan, Jean-Jacques Rousseau, et al.. Planar inductors for high frequency DC-DC converters using microwave magnetic material. ECCE, Sep 2009, San José, CA, United States. pp.1890 - 1894, ⟨10.1109/ECCE.2009.5316363⟩. ⟨hal-00618646⟩