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Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, David Trémouilles, et al.. First results on 1.2 kV SiC MOSFET body diode robustness tests. Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩. ⟨hal-04282544⟩

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Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Luong Viêt V Phung, Besar Asllani, et al.. 4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method. Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩. ⟨hal-03689424⟩

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Jean-François Mogniotte, Dominique Tournier, Christophe Raynaud, Mihai Lazar, Dominique Planson, et al.. Silicon Carbide Technology of MESFET-Based Power Integrated Circuits. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩. ⟨hal-01864533⟩

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Besar Asllani, Maxime Berthou, Dominique Tournier, Pierre Brosselard, Phillippe Godignon. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range. Materials Science Forum, 2016, 858, pp.741 - 744. ⟨10.4028/www.scientific.net/MSF.858.741⟩. ⟨hal-01646323⟩

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Shiqin Niu, Maxime Berthou, Dominique Tournier. Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel. Materials Science Forum, 2016, 858, pp.925 - 928. ⟨10.4028/www.scientific.net/MSF.858.925⟩. ⟨hal-01857351⟩

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Amira Souguir-Aouani, Nicolas Thierry-Jebali, Dominique Tournier, Arnaud Yvon, Emmanuel Collard, et al.. Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations. Materials Science Forum, 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩. ⟨hal-01857348⟩

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Shiqin Niu, Maxime Berthou, Dominique Tournier. Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET. Materials Science Forum, 2015, 821-823, pp.797 - 800. ⟨10.4028/www.scientific.net/MSF.821-823.797⟩. ⟨hal-01857350⟩

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Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature. Materials Science Forum, 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩. ⟨hal-02116809⟩

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Maxime Berthou, Dominique Planson, Dominique Tournier. Short-Circuit Capability Exploration of Silicon Carbide Devices. Materials Science Forum, 2015, 821-823, pp.810-813. ⟨10.4028/www.scientific.net/MSF.821-823.810⟩. ⟨hal-02133674⟩

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Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Failure Analysis of ESD-stressed SiC MESFET. Microelectronics Reliability, 2015, 55 (9-10), pp.1542-1548. ⟨10.1016/j.microrel.2015.06.121⟩. ⟨hal-01176674⟩

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Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique. European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩. ⟨hal-01387989⟩

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Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantin Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩. ⟨hal-01391852⟩

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Pierre Brosselard, Florian Chevalier, Benjamin Proux, Nicolas Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode. Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩. ⟨hal-02133670⟩

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Thibaut Chailloux, Cyril Calvez, Nicolas Thierry Thierry-Jebali, Dominique Planson, Dominique Tournier. SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices. Materials Science Forum, 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩. ⟨hal-01628242⟩

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Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Tournier, Bertrand Vergne, et al.. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes. Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩. ⟨hal-01387924⟩

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Dominique Tournier, Philippe Godignon, Shiqin Niu, Jean Francois de Palma. SiC Current Limiting FETs (CLFs) for DC Applications. Materials Science Forum, 2014, 778-780, pp.895 - 898. ⟨10.4028/www.scientific.net/MSF.778-780.895⟩. ⟨hal-01857349⟩

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Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Analysis of an ESD failure mechanism on a SiC MESFET. Microelectronics Reliability, 2014, pp.MR11331. ⟨10.1016/j.microrel.2014.07.134⟩. ⟨hal-01059962⟩

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A. Vo-Ha, D. Carole, Mihai Lazar, Dominique Tournier, F. Cauwet, et al.. Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport. Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩. ⟨hal-01627830⟩

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Florian Chevalier, Pierre Brosselard, Dominique Tournier, G. Grosset, L. Dupuy, et al.. Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET. Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩. ⟨hal-00803057⟩

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Luong Viet Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, C. Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩. ⟨hal-01636483⟩

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Dominique Planson, Pierre Brosselard, Dominique Tournier, Luong Viet Phung, Christian Brykinski. Towards Very High Voltage SiC Power Devices. ECS Transactions, 2013, 50 (3), pp.425-436. ⟨10.1149/05003.0425ecst⟩. ⟨hal-04240149⟩

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Davy Carole, Arthur Vo-Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry-Jebali, et al.. Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport. Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩. ⟨hal-00803058⟩

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Arthur Vo Ha, Davy Carole, Mihai Lazar, Dominique Tournier, François Cauwet, et al.. p-Doped SiC Growth on Diamond Substrate by VLS Transport. Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩. ⟨hal-01627777⟩

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A. Vo-Ha, D. Carole, Mihai Lazar, Dominique Tournier, F. Cauwet, et al.. Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase. Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩. ⟨hal-02863887⟩

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Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOS. Materials Science Forum, 2012, 717-720, pp.1093-1096. ⟨10.4028/www.scientific.net/MSF.717-720.1093⟩. ⟨hal-00803062⟩

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Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩. ⟨hal-00803059⟩

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Jean Lorenzzi, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate. Materials Science Forum, 2012, 717-720, pp.165-168. ⟨10.4028/www.scientific.net/MSF.717-720.165⟩. ⟨hal-00803063⟩

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Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩. ⟨hal-00803061⟩

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Mihai Lazar, François Jomard, Duy Minh M Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements. Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩. ⟨hal-02166414⟩

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Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩. ⟨hal-00799902⟩

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J. Lorenzzi, Mihai Lazar, Dominique Tournier, N. Jegenyes, D. Carole, et al.. 3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt. Crystal Growth & Design, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩. ⟨hal-00786365⟩

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Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩. ⟨hal-00597432⟩

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Khalil El Falahi, Bruno Allard, Dominique Bergogne, Dominique Tournier. Evaluation of commercial CMOS SOI drivers in harsh conditions (200°C). Consideration for delay, rise-time and fall-time versus temperature. European Journal of Electrical Engineering, 2011, 14 (5), pp.587-600. ⟨10.3166/ejee.14.587-600⟩. ⟨hal-00658759⟩

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Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩. ⟨hal-02168909⟩

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Duy Minh Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩. ⟨hal-00661429⟩

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Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices. Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩. ⟨hal-02186368⟩

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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. Materials Science Forum, 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩. ⟨hal-02168907⟩

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Nicolas Dheilly, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Pascal Bevilacqua, et al.. Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩. ⟨hal-04368136⟩

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Dominique Tournier, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard, et al.. High Power Density SiC 450A AccuMOSFET for Current Limiting Applications. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩. ⟨hal-04368124⟩

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Maher Soueidan, Mihai Lazar, Duy Minh Nguyen, Dominique Tournier, Christophe Raynaud, et al.. Process Optimization for High Temperature SiC Lateral Devices. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩. ⟨hal-04368215⟩

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Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical beam induced current measurements: principles and applications to SiC device characterization. physica status solidi (a), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩. ⟨hal-00398971⟩