Extended Defects in SiC: Selective Etching and Raman Study

J L Weyher (1) , Antoine Tiberj (2) , G. Nowak (1) , J C Culbertson (3) , J A Freitas (3)

1 IHPP - Institute of High Pressure Physics [Warsaw]
2 L2C - Laboratoire Charles Coulomb
3 NRL - Naval Research Laboratory

Abstract Controlling the electrical properties of SiC requires knowledge of the nature and properties of extended defects. We have employed orthodox defect-selective etching and photo-etching methods to reveal typical and new structural defects in commercial SiC wafers. For photo-etching, the etch rate increases as the free carrier concentration decreases. The etch rate can be used to estimate the free carrier concentration with higher precision, and over a larger lateral and depth range than that accessed by Raman scattering. The logarithmic dependence of the etch rate on the free carrier concentration has been characterized.

Domaines: Matière Condensée [cond-mat]

J L Weyher, Antoine Tiberj, G. Nowak, J C Culbertson, J A Freitas. Extended Defects in SiC: Selective Etching and Raman Study. Journal of Electronic Materials, 2023, 52 (8), pp.5039-5046. ⟨10.1007/s11664-023-10272-6⟩. ⟨hal-04214705⟩