Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes

N. Dyakonova (1) , S.A. Karandashev (2) , M.E. Levinshtein (2) , B.A. Matveev (2) , M.A. Remennyi (2)

1 L2C - Laboratoire Charles Coulomb
2 A.F. Ioffe Physical-Technical Institute

The frequency and current dependences of the optical output spectral noise density, Slph, in p-InAsSbP/n-InAs infrared light emitting diodes (LEDs) has been measured for the first time. LEDs with emission centered at wavelengths  = 2.8 and 3.5 µm have been studied. In both cases, in the frequency range 2 ≤ f ≤ 100 Hz the noise spectrum is 1/f like. At constant LED pumping current, Slph is proportional to the photocurrent squared (~ Iph2). The 1/f noise intensity Slph for the LED with emission centered at  = 2.8 µm is ~2 times higher. In the LED pumping current range 0.02  ILED  0.1 A (60  jLED  300 A/cm2) the optical output 1/f noise is practically independent of ILED. The intensity of the LEDs’ optical output 1/f noise is less than the intensity of the photodiode reverse bias current noise by ~4 orders of magnitude.

Mots clés: Mid-IR photodetectors; InAs photodiodes; Low frequency noise; Photocurrent noise; Photovoltaic mode; Optical output noise

Domaines: Physique [physics]

N. Dyakonova, S.A. Karandashev, M.E. Levinshtein, B.A. Matveev, M.A. Remennyi. Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes. Infrared Physics and Technology, 2022, 125, pp.104301. ⟨10.1016/j.infrared.2022.104301⟩. ⟨hal-04104595⟩