Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs

N. Dyakonova (1) , S.A. Karandashev (2) , M.E. Levinshtein (2) , B.A. Matveev (2) , M.A. Remennyi (2) , A.A. Usikova (2)

1 L2C - Laboratoire Charles Coulomb
2 A.F. Ioffe Physical-Technical Institute

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that photocurrent fluctuations under LED illumination are smaller than photocurrent fluctuations under a black body illumination. When the photodiode is illuminated by LED, the spectral noise density follows the 1/f dependence. In the case of a black body illumination we observe a significant contribution of generation-recombination noise.

Mots clés: Mid-IR photodetectors; InAs photodiodes; Low frequency noise; Photovoltaic mode; Room temperature

Domaines: Physique [physics]

N. Dyakonova, S.A. Karandashev, M.E. Levinshtein, B.A. Matveev, M.A. Remennyi, et al.. Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs. Infrared Physics and Technology, 2021, 117, pp.103867. ⟨10.1016/j.infrared.2021.103867⟩. ⟨hal-04104578⟩