Large inverted band gap in strained three-layer InAs/GaInSb quantum wells - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Article Dans Une Revue Physical Review Research Année : 2022

Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

C Avogadri
S Gebert
S S Krishtopenko
S Contreras
A Wolf
  • Fonction : Auteur
F. Hartmann
  • Fonction : Auteur
S Höfling
  • Fonction : Auteur
B Jouault

Résumé

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10-18 meV. The former, however, features a band gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature independent. Here, we report on the realization of a large inverted band gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. By combining local and nonlocal measurements, we detect edge conductivity at temperatures up to 40 K, possibly of topological origin, with equilibrium lengths of a few micrometers. Our results pave the way for the manipulation of topological edge states at high temperatures in QW heterostructures.
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Dates et versions

hal-03939599 , version 1 (05-12-2022)
hal-03939599 , version 2 (15-01-2023)

Identifiants

Citer

C Avogadri, S Gebert, S S Krishtopenko, I Castillo, C Consejo, et al.. Large inverted band gap in strained three-layer InAs/GaInSb quantum wells. Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩. ⟨hal-03939599v2⟩
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