Single G centers in silicon fabricated by co-implantation with carbon and proton - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2022

Single G centers in silicon fabricated by co-implantation with carbon and proton

Yoann Baron
Alrik Durand
Tobias Herzig
Jan Meijer
Isabelle Robert-Philip
Vincent Jacques
Guillaume Cassabois
Anaïs Dréau

Résumé

We report the fabrication of isolated G centers in silicon with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer, which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables us to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to ∼0.2 μm$^{−2}$ . Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as an effective procedure for generating single artificial atoms in silicon for future quantum technologies.
Fichier principal
Vignette du fichier
APL22-AR-03538.pdf (1014.82 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03967286 , version 1 (01-02-2023)

Identifiants

Citer

Yoann Baron, Alrik Durand, Tobias Herzig, Mario Khoury, Sébastien Pezzagna, et al.. Single G centers in silicon fabricated by co-implantation with carbon and proton. Applied Physics Letters, 2022, 121 (8), pp.084003. ⟨10.1063/5.0097407⟩. ⟨hal-03967286⟩
105 Consultations
35 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More