Single crystal growth of monoisotopic hexagonal boron nitride from a Fe-Cr flux

Jiahan Li (1) , Christine Elias (2, 3) , Gaihua Ye , Dylan Evans , Song Liu , Rui He , Guillaume Cassabois (2, 3) , Bernard Gil (2, 3) , Pierre Valvin (2, 3) , Bin Liu , James H. Edgar (1)

1 Kansas State University
2 L2C - Laboratoire Charles Coulomb
3 NQPO

Hexagonal boron nitride (hBN) is an important insulator that is incorporated into numerous 2D electronic, optoelectronic, and photonic devices, whereas natural hBN is a mixture of 20% 10B and 80% 11B isotopes, and monoisotopic hBN is a variant with just a single boron isotope, either 10B or 11B. Consequently, monoisotopic hBN has a higher thermal conductivity and a stronger neutron absorption (in the case of h10BN), making it superior for neutron detectors, heat management materials in nano flexible electronic devices, and phonon polariton-based nanophotonics. Here we synthesized approximately monoisotopic hBN using boron powder containing a single boron isotope and nitrogen, and grew single crystals from a Fe–Cr metal flux at atmospheric pressure. Narrow Raman peaks from the shear (r1.3 cm

Domaines: Autre [cond-mat.other]

Jiahan Li, Christine Elias, Gaihua Ye, Dylan Evans, Song Liu, et al.. Single crystal growth of monoisotopic hexagonal boron nitride from a Fe-Cr flux. chemistry of materials, 8 (29), pp.9931-9935, 2020, ⟨10.1039/d0tc02143a⟩. ⟨hal-02986306⟩