SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts

Hervé Peyre (1) , Nada Habka (2) , Véronique Soulière (3) , Maher Soueidan (3) , Gabriel Ferro (3) , Yves Monteil , Jean Camassel (1)

1 L2C - Laboratoire Charles Coulomb
2 Total New Energies
3 LMI - Laboratoire des Multimatériaux et Interfaces

Mots clés: Silicon carbides SiC; SIMS - Secondary Ion Mass Spectrometry

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Hervé Peyre, Nada Habka, Véronique Soulière, Maher Soueidan, Gabriel Ferro, et al.. SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts. 6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.477-480, ⟨10.4028/www.scientific.net/MSF.556-557.477⟩. ⟨hal-02042524⟩