Modelling of 4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes (1) , Konstantin Vassilevski (2) , Antonis Stavrinidis , Konstantin Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis , Emmanouil Vassakis , Hervé Peyre (3) , Nikolaos Makris (4) , Matthias Bucher (5) , Patrick Schmid , Dionyssios Stefanakis , Dimitrios Tassis (6)

1 Institute of Electronic Structure & Laser
2 Newcastle University [Newcastle]
3 L2C - Laboratoire Charles Coulomb
4 Department of Psychiatry [Boston]
5 Technical University of Crete [Chania]
6 Aristotle University of Thessaloniki

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Konstantinos Zekentes, Konstantin Vassilevski, Antonis Stavrinidis, Konstantin Konstantinidis, Maria Kayambaki, et al.. Modelling of 4H-SiC VJFETs with Self-Aligned Contacts. 16th International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Catane, Italy. pp.913-916. ⟨hal-02025247⟩