High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

B. Sadovyi , M. Amilusik , G. Staszczak , M. Bockowski , I. Grzegory , S. Porowski , Leszek Konczewicz (1) , V. Tsybulskyi , M. Panasyuk , V. Rudyk , I. Karbovnyk , V. Kapustianyk , E. Litwin-Staszewska , R. Piotrzkowski

1 L2C - Laboratoire Charles Coulomb

Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.

Mots clés: GaN; Electrical properties; Crystal growth

Domaines: Science des matériaux [cond-mat.mtrl-sci]

B. Sadovyi, M. Amilusik, G. Staszczak, M. Bockowski, I. Grzegory, et al.. High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions. Acta Physica Polonica A, 2016, 129 (1A), pp.A126-A128. ⟨10.12693/APhysPolA.129.A-126⟩. ⟨hal-01944980⟩