Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Pawel Kwasnicki (1, 2) , Roxana Arvinte (3) , Herve Peyre (1, 2) , Marcin Zielinski (4) , Leszek Konczewicz (1, 2) , Sylvie Contreras (1, 2) , Jean Camassel (2) , Sandrine Juillaguet (1, 2)

1 L2C - Laboratoire Charles Coulomb
2 SMC - Semi-conducteurs: Graphène, Grand gap & Photovoltaïque
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
4 NOVASiC

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Domaines: Matière Condensée [cond-mat]

Pawel Kwasnicki, Roxana Arvinte, Herve Peyre, Marcin Zielinski, Leszek Konczewicz, et al.. Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD. HETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩. ⟨hal-01936666⟩