Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization

Matthieu Florentin (1) , Joan Marc Rafi (1) , Florian Chevalier (1) , Victor Soler (1) , Leszek Konczewicz (2, 3) , Sylvie Contreras (2, 3) , Sandrine Juillaguet (2, 3) , Josep Montserrat (1) , Philippe Godignon (1)

1 CNM - Centro Nacional de Microelectronica [Spain]
2 L2C - Laboratoire Charles Coulomb
3 SMC - Semi-conducteurs: Graphène, Grand gap & Photovoltaïque

In this work, a charge pumping characterization has been carried out on 4H-SiC nMOSFETs built with different SiC doping processes. Because charge pumping (CP) measurements on SiC are complex to implement, three different CP methods have been used for Dit characterization. The impact of geometrical and electrical parameters on each method is studied. Finally, it is detailed the full measurement flow chosen for a deeper and more accurate understanding of Dit electrical characterization.

Domaines: Matière Condensée [cond-mat]

Matthieu Florentin, Joan Marc Rafi, Florian Chevalier, Victor Soler, Leszek Konczewicz, et al.. Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization. 10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.717 - 720, ⟨10.4028/www.scientific.net/MSF.821-823.717⟩. ⟨hal-01936637⟩