Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
Résumé
Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
Communication Dans Un Congrès
Année : 2014
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https://hal.science/hal-01936275
Soumis le : mardi 27 novembre 2018-12:34:17
Dernière modification le : vendredi 24 mars 2023-14:53:08
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Identifiants
- HAL Id : hal-01936275 , version 1
- DOI : 10.4028/www.scientific.net/MSF.778-780.243
Citer
Pawel Kwasnicki, V. Jokubavicius, J. W. Sun, Herve Peyre, R. Yakimova, et al.. Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.243-+, ⟨10.4028/www.scientific.net/MSF.778-780.243⟩. ⟨hal-01936275⟩
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