Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

Sylvie Contreras (1, 2) , Leszek Konczewicz (1, 2) , Roxana Arvinte , Herve Peyre (1, 2) , Thierry Chassagne (3) , Marcin Zielinski (4) , Sandrine Juillaguet (1)

1 L2C - Laboratoire Charles Coulomb
2 SMC - Semi-conducteurs: Graphène, Grand gap & Photovoltaïque
3 Technolac - Savoie Technolac
4 NOVASiC

Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Sylvie Contreras, Leszek Konczewicz, Roxana Arvinte, Herve Peyre, Thierry Chassagne, et al.. Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates. 11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275. ⟨hal-01935564⟩