Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers
Résumé
Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers
Communication Dans Un Congrès
Année : 2017
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https://hal.science/hal-01935556
Soumis le : lundi 26 novembre 2018-17:52:27
Dernière modification le : vendredi 1 mars 2024-18:20:03
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- HAL Id : hal-01935556 , version 1
Citer
Marcin Zielinski, Thierry Chassagne, Roxana Arvinte, Adrien Michon, Marc Portail, et al.. Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers. 11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79. ⟨hal-01935556⟩
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