High Temperature Annealing of MBE-grown Mg-doped GaN

Sylvie Contreras (1, 2) , Leszek Konczewicz (1, 2) , Herve Peyre (1, 2) , Sandrine Juillaguet (1, 2) , M. Al Khalfioui , S. Matta , M. Leroux , B. Damilano , J. Brault

1 L2C - Laboratoire Charles Coulomb
2 SMC - Semi-conducteurs: Graphène, Grand gap & Photovoltaïque

High Temperature Annealing of MBE-grown Mg-doped GaN

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Physique [physics]; Matière Condensée [cond-mat]

Sylvie Contreras, Leszek Konczewicz, Herve Peyre, Sandrine Juillaguet, M. Al Khalfioui, et al.. High Temperature Annealing of MBE-grown Mg-doped GaN. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩. ⟨hal-01935176⟩