Switching of exciton character in double InGaN/GaN quantum wells

T. Suski (1) , G Staszczak (1) , K P Korona (2) , P. Lefebvre (3) , E. Monroy (4) , P A Drozdz (1, 2) , G Muzioł (1) , C. Skierbiszewski (1, 5) , M. Kulczykowski (6) , M. Matuszewski (6) , E Grzanka (1, 5) , S Grzanka (1, 5) , K Pieniak (1) , K Gibasiewicz (1) , A Khachapuridze (1) , J Smalc-Koziorowska (1, 5) , L Marona (1, 5) , P Perlin (1, 5)

1 IHPP - Institute of High Pressure Physics [Warsaw]
2 IFD - Institute of Experimental Physics [Warsaw]
3 L2C - Laboratoire Charles Coulomb
4 NPSC - Nanophysique et Semiconducteurs
5 TopGaN
6 Institute of Physics, Polish Academy of Sciences

The dependence on exciton density of the interwell coupling scheme in a series of InGaN/GaN symmetrical double quantum wells (DQWs) with varying central barrier width was observed. Continuous-wave photolu-minescence (cw-PL) and time-resolved photoluminescence (TRPL), measured at low temperature (6-13 K), allowed us to examine the competition between three optical recombination channels, namely, the recombination of (i) intrawell excitons (DXs), (ii) interwell indirect excitons (IXs), and (iii) presumably coupled well excitons (CWXs), built of electron and hole wave functions that are widely spread over the entire DQW structure. We demonstrate a rather abrupt switching effect that relies on the actual exciton density in the system. In cw-PL experiments as a function of the pumping laser power, this switching is characterized by a threshold laser power density above which we observe (i) a significant change of slope of both the power-dependent blueshift and intensity of the ground-state exciton and (ii) the appearance of higher-energy optical emissions. In TRPL, as the PL intensity decays with time, both these effects are visible but in opposite direction, including the PL intensity transfer from the higher-energy state to the ground state. The observed switching is assigned to a change of the dominant excitonic recombination regime: at low pumping densities the dominant emission arises from the extremely long-lived IX, whereas above threshold the dominant emission corresponds to DXs or CWXs, depending on the barrier width. The threshold power density (or threshold time for TRPL) presents a clearly exponential dependence upon the width of the central barrier, which demonstrates the role of carrier tunneling in the overall switching process. The comparison of IXs in nitride QWs with bias electric-field induced IXs in GaAs/AlGaAs DQWs shows that the spectral blueshifts are a few times larger in the former structures. This enhancement originates from the built-in electric field in group-III nitrides, which has truly microscopic character. Moreover, it is argued that the presence of the potential fluctuations due to alloy disorder and the fluctuations of the coupling barrier width have only a secondary effect on the observed switching.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

T. Suski, G Staszczak, K P Korona, P. Lefebvre, E. Monroy, et al.. Switching of exciton character in double InGaN/GaN quantum wells. Physical Review B, 2018, 98, ⟨10.1103/PhysRevB.98.165302⟩. ⟨hal-01891681⟩