High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors

Dominique Coquillat
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Nina Diakonova
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Christophe Consejo
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  • PersonId : 995043
Dmytro But
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Sandra Ruffenach
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Frederic Teppe
A. Muraviev
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A. Gutin
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M. Shur
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Wojciech Knap
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Résumé

Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25–3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz.
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Dates et versions

hal-01555388 , version 1 (04-07-2017)

Identifiants

Citer

Dominique Coquillat, V. Nodjiadjim, S. Blin, A. Konczykowska, Nina Diakonova, et al.. High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors. FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES, 2017, Sendai, Japan. pp.1-9, ⟨10.1142/S0129156416400115⟩. ⟨hal-01555388⟩
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