Microwave-induced resistance oscillations as a classical memory effect

Y. M. Beltukov (1, 2) , Michel Dyakonov (2)

1 A.F. Ioffe Physical-Technical Institute
2 L2C - Laboratoire Charles Coulomb

By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by re-collisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magneto-transport in presence of a microwave field, taking account of memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

Y. M. Beltukov, Michel Dyakonov. Microwave-induced resistance oscillations as a classical memory effect. Physical Review Letters, 2016, 116 (17), pp.176801. ⟨10.1103/PhysRevLett.116.176801⟩. ⟨hal-01360270⟩