InP Double Heterojunction Bipolar Transistor for detection above 1 THz

Dominique Coquillat (1) , V. Nodjiadjim , A. Konczykowska , Nina Diakonova (1) , Christophe Consejo (1) , Sandra Ruffenach (1) , Frederic Teppe (1) , M. Riet , A. Muraviev , A. Gutin , M. Shur , J. Godin , Wojciech Knap (1)

1 L2C - Laboratoire Charles Coulomb

We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz. They can operate far above the frequencies at which they have gain and can still rectify THz current and voltage.

Domaines: Physique Générale [physics.gen-ph]

Dominique Coquillat, V. Nodjiadjim, A. Konczykowska, Nina Diakonova, Christophe Consejo, et al.. InP Double Heterojunction Bipolar Transistor for detection above 1 THz. 2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015, Hong Kong, China. ⟨hal-01336484⟩