Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.

F Fedichkin (1) , P Andreakou (1) , P Valvin (1) , M Vladimirova (1) , T Guillet (1) , T Bretagnon (1) , A Dussaigne (2) , N Grandjean (3) , Pierre Lefebvre (1)

1 L2C - Laboratoire Charles Coulomb
2 ALEDIA
3 Institute of Condensed Matter Physics [Lausanne]

We present spatially- and time-resolved photoluminescence experiments on polar GaN/AlGaN quantum well structures, showing exciton propagation distance of tens of micrometers from generation position and exciton radiative lifetimes of tens of microseconds. We study in detail the dynamics and range of their relaxation/diffusion along the growth plane, as a function of temperature.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

F Fedichkin, P Andreakou, P Valvin, M Vladimirova, T Guillet, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.. Compound Semiconductor Week 2014, May 2014, Montpellier, France. . ⟨hal-01305161⟩