Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

K. Lekhal (1) , B. Damilano (1) , H. T. Ngo , Daniel Rosales (2) , P. de Mierry (1) , S. Hussain (1) , P. Vennegues (1) , Bernard Gil (2, 3)

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 L2C - Laboratoire Charles Coulomb
3 PEPS - Physique de l'Exciton, du Photon et du Spin

XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission

Domaines: Autre [cond-mat.other]

K. Lekhal, B. Damilano, H. T. Ngo, Daniel Rosales, P. de Mierry, et al.. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission. Applied Physics Letters, 2015, 106 (14), pp.142101. ⟨10.1063/1.4917222⟩. ⟨hal-01238729⟩