Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

Daniel Rosales (1) , Bernard Gil (1) , Thierry Bretagnon (1) , Fan Zhang (2) , Serdal Okur (2) , Mortezza Monaravian (2) , Natalya Nizioumskaia (2) , Vitaly Avrutin (2) , Umit Ozgur (2) , Hadis Morkoc (2) , Jakob Leach (3)

1 L2C - Laboratoire Charles Coulomb
2 VCU - Virginia Commonwealth University
3 KYMATECH - Kyma Technologies Inc.

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K–300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Domaines: Autre [cond-mat.other]

Daniel Rosales, Bernard Gil, Thierry Bretagnon, Fan Zhang, Serdal Okur, et al.. Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs. SPIE PHOTONIC WEST, Feb 2014, sann francisco, United States. pp.Proceedings of SPIE 8986, Article Number: 89860L, ⟨10.1117/12.2036984⟩. ⟨hal-01021314⟩