Excitonic recombination dynamics in non-polar and semi-polar AlGaN/GaN multiple QWs

Daniel Rosales (1) , Bernard Gil (1) , Thierry Bretagnon (1) , Brahim Guizal (1) , Zhang Fan , Serdal Okur , Mortezza Monavarian , Natalia Izyumskaya , Vitaly Avrutin , Umit Ozmur , Hadis Morkoc , Jakob Leach

1 L2C - Laboratoire Charles Coulomb

We compare the optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on an m-plane (10-10) oriented GaN substrate with those of (1-101)-oriented GaN/Al0.15Ga0.85N multiple quantum wells grown by metal-organic chemical vapor deposition on a patterned (001) 7°-off oriented silicon substrate. The optical properties are studied in 8K-300K temperature range. They reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature- dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations. A global comparison of the light emission efficiency in both samples is finally addressed and brought in agreement with the predictions of k.p calculations.

Mots clés: nitrides

Domaines: Autre [cond-mat.other]

Daniel Rosales, Bernard Gil, Thierry Bretagnon, Brahim Guizal, Zhang Fan, et al.. Excitonic recombination dynamics in non-polar and semi-polar AlGaN/GaN multiple QWs. 5th International symposium on growth on nitrides, May 2014, France. ⟨hal-01021275⟩