Asymmetric Dual-Grating Gate InGaAs/InAlAs/InP HEMTs for Ultrafast and Ultrahigh Sensitive Terahertz Detection

T Otsuji , Takayuki Watanabe (1) , Stephane Boubanga Tombet (2) , T. Suemitsu (1) , Dominique Coquillat (3) , Wojciech Knap (3) , D. V. Fateev (4) , V. V. Popov (4)

1 Tohoku University [Sendai]
2 GES - Groupe d'étude des semiconducteurs
3 L2C - Laboratoire Charles Coulomb
4 IRE - Kotelnikov Institute of Radio Engineering and Electronics

This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/root Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.

Mots clés: terahertz; plasmon; detector; HEMT; grating

Domaines: Physique Générale [physics.gen-ph]

T Otsuji, Takayuki Watanabe, Stephane Boubanga Tombet, T. Suemitsu, Dominique Coquillat, et al.. Asymmetric Dual-Grating Gate InGaAs/InAlAs/InP HEMTs for Ultrafast and Ultrahigh Sensitive Terahertz Detection. 25th International Conference on Indium Phosphide and Related Materials (IPRM), May 2013, Kobe, Japan. pp.1-3. ⟨hal-00980610⟩