Field effect transistor as detector of THz radiation helicity

Konstantin Romanov , Nina Diakonova (1) , Dmytro But (1) , Frederic Teppe (1) , Wojciech Knap (1) , Michel Dyakonov (1) , C. Drexler , P. Olbrich , J. Karch , M. Schafberger , S. Ganichev , Yu Mityagin , Oleg Klimenko

1 L2C - Laboratoire Charles Coulomb

We use two antenna model to develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect is due to the mixing of the ac signals produced in the channel by the two antennas. We obtain the helicity-dependent part of the photoresponse and its dependence on the antenna impedance, gate length, and gate voltage. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Konstantin Romanov, Nina Diakonova, Dmytro But, Frederic Teppe, Wojciech Knap, et al.. Field effect transistor as detector of THz radiation helicity. TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS IV, Aug 2013, San-Diego, United States. pp.88460N, ⟨10.1117/12.2022264⟩. ⟨hal-00954531⟩