Plasmonic and bolometric terahertz detection by graphene field-effect transistor

A. V. Muraviev (1) , S. L. Rumyantsev (1, 2) , G. Liu (3) , A. A. Balandin (3) , Wojciech Knap (4) , M. S. Shur (1)

1 RPI - Rensselaer Polytechnic Institute
2 RAS - Russian Academy of Sciences [Moscow]
3 UC Riverside - University of California [Riverside]
4 L2C - Laboratoire Charles Coulomb

Polarization dependence analysis of back-gated graphene field-effect transistor terahertz responsivity at frequencies ranging from 1.63 to 3.11 THz reveals two independent mechanisms of THz detection by graphene transistor: plasmonic, associated with the transistor nonlinearity, and bolometric, caused by graphene sheet temperature increase due to THz radiation absorption. In the bolometric regime, electron and hole branches demonstrate a very different response to THz radiation, which we link to the asymmetry of the current-voltage characteristics temperature dependence with respect to the Dirac point. Obtained results are important for development of high-efficiency graphene THz detectors.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

A. V. Muraviev, S. L. Rumyantsev, G. Liu, A. A. Balandin, Wojciech Knap, et al.. Plasmonic and bolometric terahertz detection by graphene field-effect transistor. Applied Physics Letters, 2013, 103 (18), pp.181114. ⟨10.1063/1.4826139⟩. ⟨hal-00954517⟩