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Communication Dans Un Congrès Année : 2012

Terahertz Detectors Based on Silicon Technology Field Effect Transistors

Wojciech Knap
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F. Schuster
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Dominique Coquillat
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Frederic Teppe
B. Giffard
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Dmytro But
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O. Golenkov
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F. Sizov
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Résumé

The concept of THz detection based on excitation of plasma waves in two-dimensional electron gas in Si FETs is one of the most attractive ones, as it makes possible the development of the large-scale integrated devices based on a conventional microelectronic technology including on-chip antennas and readout devices integration. In this work we report on investigations of Terahertz detectors based on low-cost silicon technology field effect transistors. We show that detectors, consisting of a coupling antenna and a n-MOS field effect transistor as rectifying element, are efficient for THz detection and imaging. We demonstrate that in the atmospheric window around 300 GHz, these detectors can achieve a record noise equivalent power below 10 pW/Hz0.5 and a responsivity above 90 kV/W once integrated with on-chip amplifier. We show also that they can be used in a very wide frequency range: from ∼0.2 THz up to 1.1 THz. THz detection by Si FETs pave the way towards high sensitivity silicon technology based focal plane arrays for THz imaging

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Dates et versions

hal-00903719 , version 1 (12-11-2013)

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Citer

Wojciech Knap, F. Schuster, Dominique Coquillat, Frederic Teppe, B. Giffard, et al.. Terahertz Detectors Based on Silicon Technology Field Effect Transistors. 2012 MRS Spring Meeting - Symposium L - Group IV Photonics for Sensing and Imaging, Apr 2012, San Francisco, United States. pp.l07-04, ⟨10.1557/opl.2012.1187⟩. ⟨hal-00903719⟩
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