InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging

Takayuki Watanabe , Stephane A. Boubanga-Tombet , Yudai Tanimoto , Denis Fateev , Viacheslav Popov , Dominique Coquillat (1) , Wojciech Knap (1) , Yahya M. Meziani , Yuye Wang , Hiroaki Minamide , Hiromasa Ito , Taiichi Otsuji

1 L2C - Laboratoire Charles Coulomb

This paper reviews recent advances in the design and performance of our original InP- and GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighly-sensitive terahertz (THz) sensing and imaging. First, the fundamental theory of plasmonic THz detection is briefly described. Second, single-gate HEMTs with parasitic antennae are introduced as a basic core device structure, and their detection characteristics and sub-THz imaging potentialities are investigated. Third, dual-grating-gate (DGG)-HEMT structures are investigated for broadband highly sensitive detection of THz radiations, and the record sensitivity and the highly-sensitive THz imaging are demonstrated using the InP-based asymmetric DGG-HEMTs. Finally, the obtained results are summarized and future trends are addressed.

Mots clés: Asymmetry; detection; high-electron-mobility transistor (HEMT); imaging; plasmon; sensing; terahertz

Domaines: Physique Générale [physics.gen-ph]

Takayuki Watanabe, Stephane A. Boubanga-Tombet, Yudai Tanimoto, Denis Fateev, Viacheslav Popov, et al.. InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging. IEEE Sensors Journal, 2013, 13 (1), pp.89. ⟨10.1109/JSEN.2012.2225831⟩. ⟨hal-00903663⟩