Terahertz detection using Si-SiGe MODFETs

Y.M Meziani , J.E Velazquez-Perez , Dominique Coquillat (1) , Nina Diakonova (1) , Wojciech Knap (1) , I Grigelionis , E Garcia-Garcia , K Fobelets

1 L2C - Laboratoire Charles Coulomb

We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by two types of THz sources at 0.292 THz and at 1.5 THz. Non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas along with photoresponse measurements were performed simultaneously to demonstrate that the observed response is related to the plasma waves oscillation in the channel. The device was cooled down to 4.2 K and resonant signature could be observed.

Mots clés: HEMTs; Logic gates; MODFETs; Oscillators; Plasma waves; Silicon HEMTs; Silicon

Domaines: Physique Générale [physics.gen-ph]

Y.M Meziani, J.E Velazquez-Perez, Dominique Coquillat, Nina Diakonova, Wojciech Knap, et al.. Terahertz detection using Si-SiGe MODFETs. Spanish Conference on Electron Devices (CDE), 2013, Feb 2013, Valladolid, Spain. pp.167, ⟨10.1109/CDE.2013.6481369⟩. ⟨hal-00816915⟩