Coherent and Tunable Terahertz Emission from Nano-metric Field Effect Transistor at Room Temperature

Stephane Boubanga-Tombet , Taiichi Otsuji , Frederic Teppe (1) , Jeremy Torres , Wojciech Knap (1)

1 L2C - Laboratoire Charles Coulomb

We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. Our results shows that properly exciting nanotransistors can pave the way for new class of coherent and easily tunable THz sources. (C) 2010 Optical Society of America

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Stephane Boubanga-Tombet, Taiichi Otsuji, Frederic Teppe, Jeremy Torres, Wojciech Knap. Coherent and Tunable Terahertz Emission from Nano-metric Field Effect Transistor at Room Temperature. 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), May 2011, United States. pp.2011. ⟨hal-00814221⟩